The forward I-V characteristics of 4H-SiC p-i-n diodes are studied in a wide range of currents and temperatures by means of an analytical model which allows to highlight the minority current contributions in the various diode regions, namely, the highly doped regions, the neutral base and the space charge layer. By accounting for the doping dependency of the various physical parameters, as bandgap narrowing, incomplete doping activation, carrier lifetime and mobility, the model turns useful to investigate the role of the various material properties at different current levels and temperatures. The accuracy of the model is verified by comparisons with numerical simulations and experimental data in a wide range of currents and temperatures, so that this model turns very useful for better understanding the impact of technological parameters on the teady-state behavior of diodes and obtaining an accurate circuital model of diodes.
|Titolo:||An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current|
|Data di pubblicazione:||2011|
|Appare nelle tipologie:||1.1 Articolo in rivista|