The current-voltage (ID-VD) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias current ranging from 100 nA up to 10 mA. The main device parameters, such as the barrier height and ideality factor are found strongly temperature-dependent. The observed behaviours are interpreted by using the thermionic emission (TE) theory with a single Gaussian distribution of the barrier height (BH). The corresponding Richardson constant is A* = 148.8 Acm−2K−2. This value is close to the theoretical one of 146 Acm−2K−2 for n-type 4H-SiC.
Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications / Zeghdar, Kamal; Bencherif, Hichem; Dehimi, Lakhdar; Pezzimenti, Fortunato; Dellacorte, Francesco G.. - In: SOLID STATE ELECTRONICS LETTERS. - ISSN 2589-2088. - 2:(2020), pp. 49-54. [10.1016/j.ssel.2020.08.001]
Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications
Pezzimenti, Fortunato;
2020-01-01
Abstract
The current-voltage (ID-VD) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias current ranging from 100 nA up to 10 mA. The main device parameters, such as the barrier height and ideality factor are found strongly temperature-dependent. The observed behaviours are interpreted by using the thermionic emission (TE) theory with a single Gaussian distribution of the barrier height (BH). The corresponding Richardson constant is A* = 148.8 Acm−2K−2. This value is close to the theoretical one of 146 Acm−2K−2 for n-type 4H-SiC.| File | Dimensione | Formato | |
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