A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the forward voltages appearing on two diodes biased at different constant currents, in a range from 30 °C up to 300 °C, was used for temperature sensing. A high sensitivity of 5.11 mV/°C was measured. This is, to the best of our knowledge, the first exper- imental result about a proportional-to-absolute-temperature sensor made with SiC diodes, showing both a good degree of linearity and long-term stability performance.

High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

S. Rao;G. Pangallo;F. Pezzimenti;F. G. Della Corte
2015-01-01

Abstract

A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The linear dependence on temperature of the difference between the forward voltages appearing on two diodes biased at different constant currents, in a range from 30 °C up to 300 °C, was used for temperature sensing. A high sensitivity of 5.11 mV/°C was measured. This is, to the best of our knowledge, the first exper- imental result about a proportional-to-absolute-temperature sensor made with SiC diodes, showing both a good degree of linearity and long-term stability performance.
2015
Schottky diodes, silicon carbide, temperature sensors, wide band gap semiconductors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12318/5965
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