A new temperature sensor based on a divanadium pentoxide/4H-silicon carbide (V2O5/4H-SiC) Schottky diode is presented. The realized device shows a good linear dependence vs. temperature of the voltage drop measured across the forward-biased junction. The diode performance, i.e. linearity and sensitivity, were analyzed in the temperature range from 147 K up to 400 K. Moreover, fundamental diode parameters were extracted from current-voltage characteristics.
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors / Rao, Sandro; Pangallo, Giovanni; Di Benedetto, Luigi; Rubino, Alfredo; Licciardo, Giandomenico; DELLA CORTE, Francesco Giuseppe. - In: PROCEDIA ENGINEERING. - ISSN 1877-7058. - 168:(2016), pp. 1003-1006. [10.1016/j.proeng.2016.11.326]
Divanadium Pentoxide/4H-silicon Carbide: A Schottky Contact for Highly Linear Temperature Sensors
Sandro Rao
;Giovanni Pangallo;Francesco Della Corte
2016-01-01
Abstract
A new temperature sensor based on a divanadium pentoxide/4H-silicon carbide (V2O5/4H-SiC) Schottky diode is presented. The realized device shows a good linear dependence vs. temperature of the voltage drop measured across the forward-biased junction. The diode performance, i.e. linearity and sensitivity, were analyzed in the temperature range from 147 K up to 400 K. Moreover, fundamental diode parameters were extracted from current-voltage characteristics.| File | Dimensione | Formato | |
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