PEZZIMENTI, Fortunato
PEZZIMENTI, Fortunato
Dipartimento di Ingegneria dell'Informazione, delle Infrastrutture e dell'Energia Sostenibile
A microchip integrated temperature sensor with RF communication channel and on-chip antenna
2009-01-01 DELLA CORTE, F. G.; Aquilino, F.; Fragomeni, L.; Merenda, M.; Pezzimenti, F.; Zito, F.
Acoustic simulation for performance evaluation of ultrasonic ranging systems
2021-01-01 Carotenuto, R.; Pezzimenti, F.; Della Corte, F. G.; Iero, D.; Merenda, M.
An a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency
2001-01-01 Della Corte, F. G.; Pezzimenti, F.
An analytical model of the forward I-V characteristics of 4H-SiC p-i-n diodes valid for a wide range of temperature and current
2011-01-01 Bellone, S.; Della Corte, F. G.; Freda Albanese, L.; Pezzimenti, F.
An efficient 4h-sic photodiode for uv sensing applications
2021-01-01 Megherbi, M. L.; Bencherif, H.; Dehimi, L.; Mallemace, E. D.; Rao, S.; Pezzimenti, F.; Della Corte, F. G.
An Enhanced Conversion Efficiency of Metal Insulator Semiconductor Solar Cells by Using Different High-K Dielectrics
2021-01-01 Machiche, S. B.; Dehimi, L.; Bencherif, H.; Pezzimenti, F.
An optimized Graphene/4H-SiC/Graphene MSM UV-photodetector operating in a wide range of temperature
2020-01-01 Bencherif, H.; Dehimi, L.; Messina, G.; Vincent, P.; Pezzimenti, F.; Della Corte, F. G.
Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions
2020-01-01 Bencherif, H.; Pezzimenti, F.; Dehimi, L.; Della Corte, F.
Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET
2019-01-01 Bencherif, H.; Yousfi, A.; Dehimi, L.; Pezzimenti, F.; Della Corte, F. G.
Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes
2015-01-01 Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.
Analysis of I–V–T Characteristics of Au/n-InP Schottky barrier diodes with modeling of nanometer-sized patches at low temperature
2019-01-01 Fritah, A.; Dehimi, L.; Pezzimenti, F.; Saadoune, A.; Abay, B.
Analysis of the current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for high performance temperature sensors
2019-01-01 Zeghdar, K.; Bencherif, H.; Dehimi, L.; Pezzimenti, F.; Della Corte, F. G.
Analysis of the electrical characteristics of Mo/4H-SiC Schottky barrier diodes for temperature sensing applications
2020-01-01 Zeghdar, K.; Dehimi, L.; Pezzimenti, F.; Megherbi, M. L.; Della Corte, F. G.
Analysis of the forward I–V characteristics of Al-implanted 4H-SiC p-i-n diodes with modeling of recombination and trapping effects due to intrinsic and doping-induced defect states
2018-01-01 Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Saadoune, A.; Della Corte, F. G.
Analysis of trapping effects on the forward current-voltage characteristics of al-implanted 4H-SiC p-i-n Diodes
2018-01-01 Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Saadoune, A.; Della Corte, F. G.
Analytical model for the forward current of Al implanted 4H-SiC p-i-n diodes in a wide range of temperatures
2009-01-01 Pezzimenti, F.; Freda Albanese, L.; Bellone, S.; Della Corte, F. G.
Analytical model for the light trapping effect on ZnO:Al/c-Si/SiGe/c-Si solar cells with an optimized design
2019-01-01 Bencherif, H.; Dehimi, L.; Pezzimenti, F.; Yousfi, A.
Analytical modeling of dual-junction tandem solar cells based on an InGaP/GaAs heterojunction stacked on a Ge substrate
2019-01-01 Bouzid, F.; Pezzimenti, F.; Dehimi, L.; Della Corte, F. G.; Hadjab, M.; Hadj Larbi, A.
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET
2019-01-01 Pezzimenti, F.; Bencherif, H.; Yousfi, A.; Dehimi, L.
Design and modeling of a novel 4H-SiC normally-off BMFET transistor for power applications
2010-01-01 Pezzimenti, F.; Della Corte, F.